the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all devices/types available in every country. please check with local nec representative for availability and additional information. ? 1998, 1999 mos field effect transistor m m m m pa1854 p-channel mos field effect transistor for switching data sheet document no. d13295ej1v0ds00 (1st edition) date published august 1999 ns cp(k) printed in japan description the m pa1854 is a switching device which can be driven directly by a 2.5 - v power source. the m pa1854 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. features can be driven by a 2.5-v power source low on-state resistance r ds(on)1 = 60 m w max. (v gs = C4.5 v, i d = C1.5 a) r ds(on)2 = 70 m w max. (v gs = C4.0 v, i d = C1.5 a) r ds(on)3 = 105 m w max. (v gs = C2.5 v, i d = C1.5 a) built-in g-s protection diode against esd ordering information part number package m pa1854gr-9jg power tssop8 absolute maximum ratings (t a = 25c) drain to source voltage v dss C12 v gate to source voltage v gss C10/+5 v drain current (dc) i d(dc) # 3.0 a drain current (pulse) note1 i d(pulse) # 1 2 a total power dissipation note2 p t 2.0 w channel temperature t ch 150 c storage temperature t stg C55 to +150 c notes 1. pw 10 m s, duty cycle 1 % 2. mounted on ceramic substrate of 5000 mm 2 x 1.1 mm remark the diode connected between the gate and source of the transistor serves as a protector against esd. when this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. package drawing (unit : mm) 14 85 6.4 0.2 4.4 0.1 1.0 0.2 0.145 0.055 0.1 0.8 max. 3.15 0.15 3.0 0.1 0.65 0.10 m 0.27 +0.03 C0.08 0.25 0.5 3 +5 C3 0.6 +0.15 C0.1 1.2 max. 0.10.05 1.00.05 1 :drain1 2, 3 :source1 4 :gate1 5 :gate2 6, 7 :source2 8 :drain2 equivalent circuit source1 body diode gate protection diode gate1 drain1 source2 body diode gate protection diode gate2 drain2
data sheet d13295ej1v0ds00 2 m m m m pa1854 electrical characteristics (t a = 25 c) characteristics symbol test conditions min. typ. max. unit drain cut-off current i dss v ds = C12 v, v gs = 0 v C10 m a gate leakage current i gss v gs = # 10 v, v ds = 0 v # 10 m a gate cut-off voltage v gs(off) v ds = C10 v, i d = C1 ma C0.5 C0.9 C1.5 v forward transfer admittance | y fs |v ds = C10 v, i d = C1.5 a16.0s drain to source on-state resistance r ds(on)1 v gs = C4.5 v, i d = C1.5 a4660m w r ds(on)2 v gs = C4.0 v, i d = C1.5 a4970m w r ds(on)3 v gs = C2.5 v, i d = C1.5 a 75 105 m w input capacitance c iss v ds = C10 v 737 pf output capacitance c oss v gs = 0 v 322 pf reverse transfer capacitance c rss f = 1 mhz 195 pf turn-on delay time t d(on) v dd = C10 v82ns rise time t r i d = C1.5 a 460 ns turn-off delay time t d(off) v gs(on) = C4.0 v 860 ns fall time t f r g = 10 w 1380 ns total gate charge q g v dd = C10 v8nc gate to source charge q gs i d = C3.0 a2nc gate to drain charge q gd v gs = C4.0 v3nc diode forward voltage v f(s-d) i f = 3.0 a, v gs = 0 v0.80v reverse recovery time t rr i f = 1.0 a, v gs = 0 v29ns reverse recovery charge q rr di/dt = 50 a / m s6nc test circuit 1 switching time test circuit 2 gate charge pg. r g 0 v gs d.u.t. r l v dd t = 1 s m duty cycle 1 % v gs wave form i d wave form v gs 10 % 90 % v gs(on) 10 % 0 i d 90 % 90 % t d(on) t r t d(off) t f 10 % t r g = 10 w i d 0 t on t off pg. 50 w d.u.t. r l v dd i g = 2 ma
data sheet d13295ej1v0ds00 3 m m m m pa1854 typical characteristics (t a = 25c) 30 150 60 90 20 60 80 40 0 100 120 derating factor of forward bias safe operating area dt - derating factor - % t a - ambient temperature - ?c forward bias safe operating area - 10.0 - 100.0 i d - drain current - a - 1.0 v ds - drain to source voltage - v - 100 - 10 - 1 - 0.1 - 0.1 - 0.01 single pulse mounted on ceramic substrate of 50cm x 1.1mm p d (fet1) : p d (fet2) = 1:1 2 i d (pulse) i d ( dc ) r ds(on) limited (@v gs = - 4.5 v) 100 ms 10 ms pw = 1 ms dc drain current vs. drain to source voltage v ds - drain to source voltage - v i d - drain current - a - 0.2 0 - 0.8 - 1.0 - 0.4 - 0.6 - 5 0 - 15 - 10 v gs = - 4.5 v - 4.0 v - 2.5 v - 10 - 1 - 0.1 - 0.01 - 0.001 - 0.0001 - 0.00001 0 - 1 - 2 - 3 - 100 25 ?c 75 ?c t a = 125 ?c v gs - gate to source voltage - v - 25 ?c v ds = - 10 v transfer characteristics i d - drain current - a gate to source cut-off voltage vs. channel temperature t ch - channel temperature - ?c v gs(off) - gate to source cut-off voltage - v v ds = - 10 v i d = - 1 ma - 50 50 100 0 150 - 1.5 - 1.0 - 0.5 - 1 - 10 - 100 - 0.1 v ds = - 10 v t a = - 25 ?c 25 ?c 75 ?c 125 ?c i d - drain current - a | y fs | - forward transfer admittance - s 1 10 0.1 0.01 - 0.01 100 forward transfer admmittance vs. drain current
data sheet d13295ej1v0ds00 4 m m m m pa1854 drain to source on-state resistance vs. drain current - 1 - 0.1 - 0.01 - 10 - 100 i d - drain current - a r ds(on) - drain to source on-state resistance - m w 60 t a = 125 ?c 75 ?c - 25 ?c 25 ?c 70 80 90 100 v gs = - 2.5 v drain to source on-state resistance vs. drain current - 1 - 0.1 - 0.01 - 10 - 100 i d - drain current - a r ds(on) - drain to source on-state resistance - m w 30 t a = 125 ?c 75 ?c - 25 ?c 25 ?c 50 70 90 v gs = - 4.0 v drain to source on-state resistance vs. drain current - 1 - 0.1 - 0.01 - 10 - 100 i d - drain current - a r ds(on) - drain to source on-state resistance - m w 20 t a = 125 ?c 75 ?c - 25 ?c 25 ?c 40 60 80 v gs = - 4.5 v drain to source on state resistance vs. channel temperature t ch - channel temperature -?c i d = - 1.5 a - 50 0 50 100 150 20 60 80 40 100 r ds (on) - drain to source on-state resistance - m w - 4.5 v - 4.0 v v gs = - 2.5 v 0 20 60 40 80 100 120 - 2 - 4 - 6 - 8 - 10 r ds (on) - drain to source on-state resistance - m w v gs - gate to source voltage - v i d = - 1.5 a drain to source on-state resistance vs. gate to source voltage capacitance vs. drain to source voltage v ds - drain to source voltage - v ciss, coss, crss - capacitance - pf 10 - 0.1 100 1000 10000 - 1 - 10 - 100 f = 1 mhz c iss c rss c oss
data sheet d13295ej1v0ds00 5 m m m m pa1854 - 0.1 - 1 - 10 i d - drain current - a td (on) , tr, td (off) , tf - swwitchig time - ns 10000 1000 100 10 td (off) td (on) tf tr switching characteristics v dd = - 10v v gs ( on ) = - 4.0v r g = 10 w 0.01 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 source to drain diode forward voltage i f - source to drain current - a v f(s-d) - source to drain voltage - v v gs = 0 v q g - gate charge - nc 0 13 579 8 46 210 dynamic input characteristics v gs - gate to source voltage - v 0 - 1 - 2 - 3 - 4 - 5 - 6 v dd = - 10 v i d = - 3.0 a transient thermal resistance vs. pulse width pw - pulse width - s r th(t) - transient thermal resistance - ?c/w 10 0.1 1 100 1000 1 1m 10m 100m 10 100 1000 mounted on ceramic substrate of 50cm x 1.1mm single pulse p d (fet1) : p d (fet2) = 1:1 2 62.5 ?c/w
data sheet d13295ej1v0ds00 6 m m m m pa1854 [memo]
data sheet d13295ej1v0ds00 7 m m m m pa1854 [memo]
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